Microwave Frequency Characterization of Barium Titanate Films Obtained Via Sol-Gel

The present work focuses on the structural, morphological and dielectric characterization of barium titanate films (BTO or BaTiO3 due to its chemical formula) deposited by spin coating on crystalline silicon (Si) substrates and CPW resonators using the Sol-Gel technique with a Ba/Ti molar ratio of 0...

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Main Authors:	Marulanda-Bernal, José Ignacio, Gallo-Castrillón, Wilson Henry, Mosquera-Palacio, Diana Marybel
Format:	Online
Language:	eng spa
Published:	Universidad Pedagógica y Tecnológica de Colombia 2019
Subjects:	dielectric constant ferroelectrics microwave materials loss tangent Sol-Gel thin films constante dieléctrica ferroeléctricos materiales en microondas películas delgadas tangente de pérdida
Online Access:	https://revistas.uptc.edu.co/index.php/ingenieria/article/view/10416
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author	Marulanda-Bernal, José Ignacio Gallo-Castrillón, Wilson Henry Mosquera-Palacio, Diana Marybel
author_facet	Marulanda-Bernal, José Ignacio Gallo-Castrillón, Wilson Henry Mosquera-Palacio, Diana Marybel
author_sort	Marulanda-Bernal, José Ignacio
collection	OJS
description	The present work focuses on the structural, morphological and dielectric characterization of barium titanate films (BTO or BaTiO3 due to its chemical formula) deposited by spin coating on crystalline silicon (Si) substrates and CPW resonators using the Sol-Gel technique with a Ba/Ti molar ratio of 0.5/0.5. The coplanar waveguides were manufactured on alumina substrates (Al2O3) with 3 mm of gold (Au) metallization using the laser ablation technique. The scanning electron microscopy (SEM) with X-ray energy dispersion spectrometry (EDS) showed the existence of a BTO film with an elementary composition of 14.62% barium and 5.65% titanium, with a thickness of 0.77 mm measured using the profilometric mode of the atomic force microscopy (AFM). Dielectric characterization was carried out by comparing the frequency response (parameter S21) of a CPW resonator with deposited BTO film and another reference resonator (without film) using a network vector analyzer (VNA). These measurements are compared in turn with computational simulations to obtain the dielectric properties. For the BTO film was determined a relative dielectric constant constant (er) of 160 with a loss tangent (Tand) of 0.012 for a frequency of 3.60 GHz. The dielectric constant constant and the ferroelectric property of the material produced are quite promising for applications in microwave circuits, such as miniaturization and tuning.
format	Online
id	oai:oai.revistas.uptc.edu.co:article-10416
institution	Revista Facultad de Ingeniería
language	eng spa
publishDate	2019
publisher	Universidad Pedagógica y Tecnológica de Colombia
record_format	ojs
spelling	oai:oai.revistas.uptc.edu.co:article-104162021-07-13T02:24:48Z Microwave Frequency Characterization of Barium Titanate Films Obtained Via Sol-Gel Caracterización en frecuencia de microondas de películas de titanato de bario obtenidas vía Sol-Gel Marulanda-Bernal, José Ignacio Gallo-Castrillón, Wilson Henry Mosquera-Palacio, Diana Marybel dielectric constant ferroelectrics microwave materials loss tangent Sol-Gel thin films constante dieléctrica ferroeléctricos materiales en microondas películas delgadas Sol-Gel tangente de pérdida The present work focuses on the structural, morphological and dielectric characterization of barium titanate films (BTO or BaTiO3 due to its chemical formula) deposited by spin coating on crystalline silicon (Si) substrates and CPW resonators using the Sol-Gel technique with a Ba/Ti molar ratio of 0.5/0.5. The coplanar waveguides were manufactured on alumina substrates (Al2O3) with 3 mm of gold (Au) metallization using the laser ablation technique. The scanning electron microscopy (SEM) with X-ray energy dispersion spectrometry (EDS) showed the existence of a BTO film with an elementary composition of 14.62% barium and 5.65% titanium, with a thickness of 0.77 mm measured using the profilometric mode of the atomic force microscopy (AFM). Dielectric characterization was carried out by comparing the frequency response (parameter S21) of a CPW resonator with deposited BTO film and another reference resonator (without film) using a network vector analyzer (VNA). These measurements are compared in turn with computational simulations to obtain the dielectric properties. For the BTO film was determined a relative dielectric constant constant (er) of 160 with a loss tangent (Tand) of 0.012 for a frequency of 3.60 GHz. The dielectric constant constant and the ferroelectric property of the material produced are quite promising for applications in microwave circuits, such as miniaturization and tuning. El presente trabajo se centra en la caracterización estructural, morfológica y dieléctrica de películas de titanato de bario (BTO o BaTiO3 por su fórmula química) depositados mediante la técnica que proporciona recubrimiento por medio de un sistema de rotación (spin coating) sobre substratos de silicio cristalino (Si) y resonadores CPW mediante la técnica Sol-Gel, utilizando una relación molar Ba/Ti de 0.5/0.5. Las guías de ondas se fabricaron sobre substratos de alúmina (Al2O3) con 3 mm de metalización en oro (Au) empleando la técnica de ablación láser. La microscopia electrónica de barrido (SEM) con espectrometría de dispersión de energía de rayos X (EDS) permitió evidenciar la existencia de una película de BTO con una composición elemental de 14.62 % de bario y 5.65 % de titanio, además de un espesor de 0.77 mm medido utilizando la modalidad perfilométrica de la microscopia de fuerza atómica (AFM). La caracterización dieléctrica se llevó a cabo mediante la comparación de la respuesta en frecuencia (parámetro S21) de un resonador CPW con película de BTO depositada y otro resonador de referencia (sin película) usando un analizador vectorial de red (VNA). Estas medidas se comparan a su vez con simulaciones computacionales para obtener las propiedades dieléctricas. Para la película de BTO se determinó una constante dieléctrica relativa (er) de 160 con tangente de pérdida (Tand) de 0.012 para una frecuencia de 3.60 GHz. La constante dieléctrica y la propiedad ferroeléctrica del material elaborado son características bastante promisorias para aplicaciones en circuitos de microondas, tales como miniaturización y sintonizabilidad. Universidad Pedagógica y Tecnológica de Colombia 2019-12-03 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion application/pdf application/pdf application/xml https://revistas.uptc.edu.co/index.php/ingenieria/article/view/10416 10.19053/01211129.v29.n54.2020.10416 Revista Facultad de Ingeniería; Vol. 29 No. 54 (2020): Continuos Publication; e10416 Revista Facultad de Ingeniería; Vol. 29 Núm. 54 (2020): Publicación Continua; e10416 2357-5328 0121-1129 eng spa https://revistas.uptc.edu.co/index.php/ingenieria/article/view/10416/8926 https://revistas.uptc.edu.co/index.php/ingenieria/article/view/10416/8615 https://revistas.uptc.edu.co/index.php/ingenieria/article/view/10416/9217
spellingShingle	dielectric constant ferroelectrics microwave materials loss tangent Sol-Gel thin films constante dieléctrica ferroeléctricos materiales en microondas películas delgadas Sol-Gel tangente de pérdida Marulanda-Bernal, José Ignacio Gallo-Castrillón, Wilson Henry Mosquera-Palacio, Diana Marybel Microwave Frequency Characterization of Barium Titanate Films Obtained Via Sol-Gel
title	Microwave Frequency Characterization of Barium Titanate Films Obtained Via Sol-Gel
title_alt	Caracterización en frecuencia de microondas de películas de titanato de bario obtenidas vía Sol-Gel
title_full	Microwave Frequency Characterization of Barium Titanate Films Obtained Via Sol-Gel
title_fullStr	Microwave Frequency Characterization of Barium Titanate Films Obtained Via Sol-Gel
title_full_unstemmed	Microwave Frequency Characterization of Barium Titanate Films Obtained Via Sol-Gel
title_short	Microwave Frequency Characterization of Barium Titanate Films Obtained Via Sol-Gel
title_sort	microwave frequency characterization of barium titanate films obtained via sol gel
topic	dielectric constant ferroelectrics microwave materials loss tangent Sol-Gel thin films constante dieléctrica ferroeléctricos materiales en microondas películas delgadas Sol-Gel tangente de pérdida
topic_facet	dielectric constant ferroelectrics microwave materials loss tangent Sol-Gel thin films constante dieléctrica ferroeléctricos materiales en microondas películas delgadas Sol-Gel tangente de pérdida
url	https://revistas.uptc.edu.co/index.php/ingenieria/article/view/10416
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