Electronic Structure of GaAs and AlAs using a Hamiltonian Tight-Binding sp3s∗
We calculate the electronic states in volume for GaAs and AlAs in Zinc-Blenda structure using the Tight-Binding (TB) method. The TB Hamiltonian was constructed using a base of s, p and s∗ orbitals. Thes∗ orbitals represent excited states with equal symmetry as the s orbitals. Carrying out the numeri...
| Հիմնական հեղինակներ: | , , |
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| Ձևաչափ: | Online |
| Լեզու: | spa |
| Հրապարակվել է: |
Universidad Pedagógica y Tecnológica de Colombia
2021
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| Խորագրեր: | |
| Առցանց հասանելիություն: | https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/12612 |
