Electronic Structure of GaAs and AlAs using a Hamiltonian Tight-Binding sp3s∗

We calculate the electronic states in volume for GaAs and AlAs in Zinc-Blenda structure using the Tight-Binding (TB) method. The TB Hamiltonian was constructed using a base of s, p and s∗ orbitals. Thes∗ orbitals represent excited states with equal symmetry as the s orbitals. Carrying out the numeri...

ver descrição completa

Detalhes bibliográficos

Principais autores:	Rasero Causil, Diego Alejandro, Portacio, Alfonso A., Suescun , Daniel
Formato:	Online
Idioma:	spa
Publicado em:	Universidad Pedagógica y Tecnológica de Colombia 2021
Assuntos:	Tight-Binding, relaciones de dispersión, densidad de estados. Tight-Binding, dispersion relations, density of states.
Acesso em linha:	https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/12612