Closed equations for the design of class f amplifiers

This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Moreno-Rubio, Jorge Julián, Rodríguez-Mora, Javier Francisco, Cely-Angarita, Nydia Esperanza, Angarita-Malaver, Edison Ferney
Формат:	Online
Хэл сонгох:	spa
Хэвлэсэн:	Universidad Pedagógica y Tecnológica de Colombia 2015
Нөхцлүүд:	GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. amplificador de potencia alta eficiencia amplificador de microondas.
Онлайн хандалт:	https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267

Тодорхойлолт
Тойм:	This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65 %, small signal gain of 14.2 dB and saturated output power of 41 dBm, using sinusoidal excitation. The drain voltage and current waveforms are coherent with theory and the results in continuous-wave are outstanding.