Closed equations for the design of class f amplifiers
This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65...
| Main Authors: | , , , |
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| Format: | Online |
| Language: | spa |
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Universidad Pedagógica y Tecnológica de Colombia
2015
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| Online Access: | https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267 |
| _version_ | 1801705983702990848 |
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| author | Moreno-Rubio, Jorge Julián Rodríguez-Mora, Javier Francisco Cely-Angarita, Nydia Esperanza Angarita-Malaver, Edison Ferney |
| author_facet | Moreno-Rubio, Jorge Julián Rodríguez-Mora, Javier Francisco Cely-Angarita, Nydia Esperanza Angarita-Malaver, Edison Ferney |
| author_sort | Moreno-Rubio, Jorge Julián |
| collection | OJS |
| description | This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65 %, small signal gain of 14.2 dB and saturated output power of 41 dBm, using sinusoidal excitation. The drain voltage and current waveforms are coherent with theory and the results in continuous-wave are outstanding. |
| format | Online |
| id | oai:oai.revistas.uptc.edu.co:article-3267 |
| institution | Revista de Investigación, Desarrollo e Innovación (RIDI) |
| language | spa |
| publishDate | 2015 |
| publisher | Universidad Pedagógica y Tecnológica de Colombia |
| record_format | ojs |
| spelling | oai:oai.revistas.uptc.edu.co:article-32672018-07-10T22:01:23Z Closed equations for the design of class f amplifiers Ecuaciones cerradas para el diseño de amplificadores clase F Moreno-Rubio, Jorge Julián Rodríguez-Mora, Javier Francisco Cely-Angarita, Nydia Esperanza Angarita-Malaver, Edison Ferney GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. GaN-HEMT amplificador de potencia alta eficiencia HEMTs amplificador de microondas. This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65 %, small signal gain of 14.2 dB and saturated output power of 41 dBm, using sinusoidal excitation. The drain voltage and current waveforms are coherent with theory and the results in continuous-wave are outstanding. Este artículo muestra una metodología para el diseño de amplificadores clase F, basada en ecuaciones cerradas que permiten el cálculo directo de la red de acople de salida. Como demostración, un prototipo ha sido realizado usando el dispositivo GaN HEMT CGH40010 de Cree, obteniendo una eficiencia de drenaje máxima de 65%, ganancia a pequeña señal de 14.2 dB y potencia de salida en saturación de 41 dBm, usando excitación tipo sinusoidal. Las formas de onda obtenidas para el voltaje y la corriente de drenaje son coherentes con la teoría y los resultados en onda-continua son sobresalientes. Universidad Pedagógica y Tecnológica de Colombia 2015-08-15 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion application/pdf https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267 10.19053/20278306.3267 Revista de Investigación, Desarrollo e Innovación; Vol. 6 No. 1 (2015): July-December; 85-92 Revista de Investigación, Desarrollo e Innovación; Vol. 6 Núm. 1 (2015): Julio-Diciembre; 85-92 2389-9417 2027-8306 spa https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267/3484 Derechos de autor 2015 REVISTA DE INVESTIGACIÓN, DESARROLLO E INNOVACIÓN |
| spellingShingle | GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. GaN-HEMT amplificador de potencia alta eficiencia HEMTs amplificador de microondas. Moreno-Rubio, Jorge Julián Rodríguez-Mora, Javier Francisco Cely-Angarita, Nydia Esperanza Angarita-Malaver, Edison Ferney Closed equations for the design of class f amplifiers |
| title | Closed equations for the design of class f amplifiers |
| title_alt | Ecuaciones cerradas para el diseño de amplificadores clase F |
| title_full | Closed equations for the design of class f amplifiers |
| title_fullStr | Closed equations for the design of class f amplifiers |
| title_full_unstemmed | Closed equations for the design of class f amplifiers |
| title_short | Closed equations for the design of class f amplifiers |
| title_sort | closed equations for the design of class f amplifiers |
| topic | GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. GaN-HEMT amplificador de potencia alta eficiencia HEMTs amplificador de microondas. |
| topic_facet | GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. GaN-HEMT amplificador de potencia alta eficiencia HEMTs amplificador de microondas. |
| url | https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267 |
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