Closed equations for the design of class f amplifiers

This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65...

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Detalhes bibliográficos

Principais autores:	Moreno-Rubio, Jorge Julián, Rodríguez-Mora, Javier Francisco, Cely-Angarita, Nydia Esperanza, Angarita-Malaver, Edison Ferney
Formato:	Online
Idioma:	spa
Publicado em:	Universidad Pedagógica y Tecnológica de Colombia 2015
Assuntos:	GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. amplificador de potencia alta eficiencia amplificador de microondas.
Acesso em linha:	https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267