Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties
This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic ()...
| Những tác giả chính: | , , |
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| Định dạng: | Online |
| Ngôn ngữ: | spa |
| Được phát hành: |
Universidad Pedagógica y Tecnológica de Colombia
2016
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| Những chủ đề: | |
| Truy cập trực tuyến: | https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225 |
| _version_ | 1801706332562128896 |
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| author | Rasero Causil, D. A. Portacio Lamadrid, A. A. Rodríguez, J. A. |
| author_facet | Rasero Causil, D. A. Portacio Lamadrid, A. A. Rodríguez, J. A. |
| author_sort | Rasero Causil, D. A. |
| collection | OJS |
| description | This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic () distortions. In both cases, the CuIn1-xGaxSe2 is a direct semiconductor at Γ, for all concentrations.It was found that the Crystal Field Splitting (CFS) at the Γ point depends mainly on the tetragonal distortion. The CFS is positive for x &lt, 0,32 and negative for x &gt, 0.32. This behavior is due that when x is increasing, the unit cell shrinks, approaching the pseudo-atom (In,Ga) to the Se atom. |
| format | Online |
| id | oai:oai.revistas.uptc.edu.co:article-4225 |
| institution | Revista Ciencia en Desarrollo |
| language | spa |
| publishDate | 2016 |
| publisher | Universidad Pedagógica y Tecnológica de Colombia |
| record_format | ojs |
| spelling | oai:oai.revistas.uptc.edu.co:article-42252022-06-15T17:16:57Z Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties Efecto de la concentración de Ga sobre las propiedades electrónicas del CuIn1−XGaXSe2 Rasero Causil, D. A. Portacio Lamadrid, A. A. Rodríguez, J. A. CuIn1−xGaxSe2 Tight-Binding aproximación de cristal virtual Crystal Field Splitting. (CuIn1-xGaxSe2 Virtual Crystal Approximation Crystal Field Splitting) This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic () distortions. In both cases, the CuIn1-xGaxSe2 is a direct semiconductor at Γ, for all concentrations.It was found that the Crystal Field Splitting (CFS) at the Γ point depends mainly on the tetragonal distortion. The CFS is positive for x &lt, 0,32 and negative for x &gt, 0.32. This behavior is due that when x is increasing, the unit cell shrinks, approaching the pseudo-atom (In,Ga) to the Se atom. Se reportan cálculos de propiedades electrónicas del compuesto CuIn1−xGaxSe2 (x = 0,0, 0,2, 0,4, 0,6, 0,8, 1,0), usando el método Tight-Binding (TB) y Virtual Crystal Approximation (VCA). Se considera el caso ideal y con las distorsiones tetragonal (η) y aniónica (μ). En ambos casos, el CuIn1−xGaxSe2 es un semiconductor directo en Γ, para todas las concentraciones. Se encontró que el Crystal Field Splitting (CFS) en el punto Γ depende principalmente de la distorsión tetragonal. El CFS es positivo para x &lt, 0,32 y negativo para x &gt, 0,32. Este comportamiento se debe a que cuando aumenta x, la celda unitaria se contrae, acercando el pseudoátomo (In,Ga) al átomo de Se. Universidad Pedagógica y Tecnológica de Colombia 2016-02-15 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion application/pdf https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225 10.19053/01217488.4225 Ciencia En Desarrollo; Vol. 7 No. 1 (2016): Enero a Junio; 9-14 Ciencia en Desarrollo; Vol. 7 Núm. 1 (2016): Enero a Junio; 9-14 2462-7658 0121-7488 spa https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225/3656 Derechos de autor 2016 CIENCIA EN DESARROLLO |
| spellingShingle | CuIn1−xGaxSe2 Tight-Binding aproximación de cristal virtual Crystal Field Splitting. (CuIn1-xGaxSe2 Virtual Crystal Approximation Crystal Field Splitting) Rasero Causil, D. A. Portacio Lamadrid, A. A. Rodríguez, J. A. Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title | Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title_alt | Efecto de la concentración de Ga sobre las propiedades electrónicas del CuIn1−XGaXSe2 |
| title_full | Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title_fullStr | Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title_full_unstemmed | Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title_short | Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties |
| title_sort | ga concentration effect on the cuin1 xgaxse2 electronic properties |
| topic | CuIn1−xGaxSe2 Tight-Binding aproximación de cristal virtual Crystal Field Splitting. (CuIn1-xGaxSe2 Virtual Crystal Approximation Crystal Field Splitting) |
| topic_facet | CuIn1−xGaxSe2 Tight-Binding aproximación de cristal virtual Crystal Field Splitting. (CuIn1-xGaxSe2 Virtual Crystal Approximation Crystal Field Splitting) |
| url | https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225 |
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