Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties
This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic ()...
Hauptverfasser: | Rasero Causil, D. A., Portacio Lamadrid, A. A., Rodríguez, J. A. |
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Format: | Online |
Sprache: | spa |
Veröffentlicht: |
Universidad Pedagógica y Tecnológica de Colombia
2016
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Schlagworte: | |
Online Zugang: | https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225 |
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