Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties
This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic ()...
Huvudupphovsmän: | Rasero Causil, D. A., Portacio Lamadrid, A. A., Rodríguez, J. A. |
---|---|
Materialtyp: | Online |
Språk: | spa |
Publicerad: |
Universidad Pedagógica y Tecnológica de Colombia
2016
|
Ämnen: | |
Länkar: | https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225 |
- Liknande verk
-
Electronic Structure of GaAs and AlAs using a Hamiltonian Tight-Binding sp3s∗
av: Rasero Causil, Diego Alejandro, et al.
Publicerad: (2021) -
ANALYSIS OF THE DIFFRACTION EFFICIENCY IN TRANSVERSE CONFIGURATION IN SILLENITE CRYSTALS Bi12TiO20
av: Villamizar Amado, Astrid Lorena, et al.
Publicerad: (2018) -
Analysis of the diffraction efficiency in transverse configuration in sillenite crystals Bi12TiO20
av: Villamizar Amado, Astrid Lorena, et al.
Publicerad: (2018) -
BASES GENÉTICAS Y BIOLÓGICAS DEL SÍNDROME DE X FRÁGIL. (GENETIC AND BIOLOGICAL BASIS OF FRAGILE X SYNDROME.)
av: Castro, Ruth Maribel Forero, et al.
Publicerad: (2013) -
R-(+)-limonene diastereoselective epoxidation: A minireview about of the synthesis methods
av: Rubio Rodríguez, Juan Alejandro, et al.
Publicerad: (2022)