Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties

This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic ()...

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Những tác giả chính:	Rasero Causil, D. A., Portacio Lamadrid, A. A., Rodríguez, J. A.
Định dạng:	Online
Ngôn ngữ:	spa
Được phát hành:	Universidad Pedagógica y Tecnológica de Colombia 2016
Những chủ đề:	CuIn1−xGaxSe2 Tight-Binding aproximación de cristal virtual Crystal Field Splitting. (CuIn1-xGaxSe2 Virtual Crystal Approximation Crystal Field Splitting)
Truy cập trực tuyến:	https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225