Compact model with physical parameter prediction capability for RF amplifiers
In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements...
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| Format: | Online |
| Language: | spa |
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Universidad Pedagógica y Tecnológica de Colombia
2019
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| Online Access: | https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132 |
| _version_ | 1801706096185835520 |
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| author | Rafael-Valdivia, Guillermo |
| author_facet | Rafael-Valdivia, Guillermo |
| author_sort | Rafael-Valdivia, Guillermo |
| collection | OJS |
| description | In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements, data processing has been performed, deriving a new equation with the ability to reproduce both types of behavior with high precision and at different points of operation. Consequently, the work provides a new model based on a non-linear four-terminal circuit. The relevance of this model is the ability to predict physical effects such as frequency dispersion and electronic mobility of the semiconductor device. This is important because the frequency dispersion is one of the most important problems of modern communication systems that generates memory effects limiting the ability to transmit signals of high bandwidth. The fact of being able to predict the electronic mobility and the frequency dispersion help the circuit designer to improve their quality and design time. It also allows the RF component manufacturing industry to save production costs as this technique allows to predict the behavior of the circuits before implementing them. The presented methodology has been validated through the implementation of a power amplifier in LDMOS technology using the proposed technique. The proposed model is open since the proposed new technique can be implemented in any of the conventional models currently used in the industrial and academic field. |
| format | Online |
| id | oai:oai.revistas.uptc.edu.co:article-9132 |
| institution | Revista Facultad de Ingeniería |
| language | spa |
| publishDate | 2019 |
| publisher | Universidad Pedagógica y Tecnológica de Colombia |
| record_format | ojs |
| spelling | oai:oai.revistas.uptc.edu.co:article-91322021-07-13T02:25:58Z Compact model with physical parameter prediction capability for RF amplifiers Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF Rafael-Valdivia, Guillermo electronic components field effect transistors microwave circuits microwave measurements semiconductor device modeling amplificadores de potencia RF GaAs microondas movilidad electrónica transistores de efecto de campo In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements, data processing has been performed, deriving a new equation with the ability to reproduce both types of behavior with high precision and at different points of operation. Consequently, the work provides a new model based on a non-linear four-terminal circuit. The relevance of this model is the ability to predict physical effects such as frequency dispersion and electronic mobility of the semiconductor device. This is important because the frequency dispersion is one of the most important problems of modern communication systems that generates memory effects limiting the ability to transmit signals of high bandwidth. The fact of being able to predict the electronic mobility and the frequency dispersion help the circuit designer to improve their quality and design time. It also allows the RF component manufacturing industry to save production costs as this technique allows to predict the behavior of the circuits before implementing them. The presented methodology has been validated through the implementation of a power amplifier in LDMOS technology using the proposed technique. The proposed model is open since the proposed new technique can be implemented in any of the conventional models currently used in the industrial and academic field. En el presente trabajo se ha presentado un análisis de transistores de efecto de campo usando fuentes de voltaje pulsadas. Se han realizado medidas de microondas en dispositivos de tecnología HEMT’s y LDMOS poniendo en evidencia la diferencia entre el comportamiento estático y dinámico de dichos dispositivos. En base a las medidas se ha realizado un procesamiento de datos derivando una nueva ecuación con la capacidad de reproducir ambos tipos de comportamiento con elevada precisión y en diferentes puntos de operación. Consecuentemente el trabajo aporta un nuevo modelo basado en un circuito no lineal de cuatro terminales. La relevancia de este modelo es la capacidad de predecir los efectos físicos como la dispersión frecuencial y la movilidad electrónica del dispositivo semiconductor. Esto es importante pues la dispersión frecuencial es uno de los problemas más importantes de los sistemas de comunicación modernos que genera efectos memoria limitando la capacidad de transmitir señales de gran ancho de banda. El hecho de poder predecir la movilidad electrónica y la dispersión frecuencial ayudan al diseñador de circuitos a mejorar su calidad y tiempo de diseño. Además, permite a la industria de fabricación de componentes de RF ahorrar costos de producción pues esta técnica permite predecir el comportamiento de los circuitos antes de implementarlos. La metodología para la obtención del modelo compacto ha sido validada a través de la implementación de un amplificador de potencia en tecnología LDMOS usando la técnica propuesta. El modelo propuesto es abierto puesto que la nueva técnica propuesta se puede implementar en cualquiera de los modelos convencionales usados actualmente en el ámbito industrial y académico. Universidad Pedagógica y Tecnológica de Colombia 2019-04-02 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion research investigación application/pdf application/xml https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132 10.19053/01211129.v28.n51.2019.9132 Revista Facultad de Ingeniería; Vol. 28 No. 51 (2019); 73-87 Revista Facultad de Ingeniería; Vol. 28 Núm. 51 (2019); 73-87 2357-5328 0121-1129 spa https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7628 https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7902 https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7915 N.A. N.A. |
| spellingShingle | electronic components field effect transistors microwave circuits microwave measurements semiconductor device modeling amplificadores de potencia RF GaAs microondas movilidad electrónica transistores de efecto de campo Rafael-Valdivia, Guillermo Compact model with physical parameter prediction capability for RF amplifiers |
| title | Compact model with physical parameter prediction capability for RF amplifiers |
| title_alt | Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF |
| title_full | Compact model with physical parameter prediction capability for RF amplifiers |
| title_fullStr | Compact model with physical parameter prediction capability for RF amplifiers |
| title_full_unstemmed | Compact model with physical parameter prediction capability for RF amplifiers |
| title_short | Compact model with physical parameter prediction capability for RF amplifiers |
| title_sort | compact model with physical parameter prediction capability for rf amplifiers |
| topic | electronic components field effect transistors microwave circuits microwave measurements semiconductor device modeling amplificadores de potencia RF GaAs microondas movilidad electrónica transistores de efecto de campo |
| topic_facet | electronic components field effect transistors microwave circuits microwave measurements semiconductor device modeling amplificadores de potencia RF GaAs microondas movilidad electrónica transistores de efecto de campo |
| url | https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132 |
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