Compact model with physical parameter prediction capability for RF amplifiers

In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements...

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Tác giả chính:	Rafael-Valdivia, Guillermo
Định dạng:	Online
Ngôn ngữ:	spa
Được phát hành:	Universidad Pedagógica y Tecnológica de Colombia 2019
Những chủ đề:	electronic components field effect transistors microwave circuits microwave measurements semiconductor device modeling amplificadores de potencia RF GaAs microondas movilidad electrónica transistores de efecto de campo
Truy cập trực tuyến:	https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132