Compact model with physical parameter prediction capability for RF amplifiers
In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements...
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| Формат: | Online |
| Мова: | spa |
| Опубліковано: |
Universidad Pedagógica y Tecnológica de Colombia
2019
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| Онлайн доступ: | https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132 |
