Electronic Structure of GaAs and AlAs using a Hamiltonian Tight-Binding sp3s∗

We calculate the electronic states in volume for GaAs and AlAs in Zinc-Blenda structure using the Tight-Binding (TB) method. The TB Hamiltonian was constructed using a base of s, p and s∗ orbitals. Thes∗ orbitals represent excited states with equal symmetry as the s orbitals. Carrying out the numeri...

Szczegółowa specyfikacja

Opis bibliograficzny

Główni autorzy:	Rasero Causil, Diego Alejandro, Portacio, Alfonso A., Suescun , Daniel
Format:	Online
Język:	spa
Wydane:	Universidad Pedagógica y Tecnológica de Colombia 2021
Hasła przedmiotowe:	Tight-Binding, relaciones de dispersión, densidad de estados. Tight-Binding, dispersion relations, density of states.
Dostęp online:	https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/12612