Closed equations for the design of class f amplifiers

This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Moreno-Rubio, Jorge Julián, Rodríguez-Mora, Javier Francisco, Cely-Angarita, Nydia Esperanza, Angarita-Malaver, Edison Ferney
Format:	Online
Sprache:	spa
Veröffentlicht:	Universidad Pedagógica y Tecnológica de Colombia 2015
Schlagworte:	GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. amplificador de potencia alta eficiencia amplificador de microondas.
Online Zugang:	https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267