Ga Concentration Effect on the CuIn1-xGaxSe2 Electronic Properties
This paper reports some calculations of the electronic properties of CuIn1-xGaxSe2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) compound, by using the Tight-Binding (TB) method and Virtual Crystal Approximation (VCA). It is considered the ideal case and with the tetragonal () and anionic ()...
| Hlavní autoři: | , , |
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| Médium: | Online |
| Jazyk: | spa |
| Vydáno: |
Universidad Pedagógica y Tecnológica de Colombia
2016
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| Témata: | |
| On-line přístup: | https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/4225 |
