Compact model with physical parameter prediction capability for RF amplifiers

In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements...

Täydet tiedot

Bibliografiset tiedot
Päätekijä: Rafael-Valdivia, Guillermo
Aineistotyyppi: Online
Kieli:spa
Julkaistu: Universidad Pedagógica y Tecnológica de Colombia 2019
Aiheet:
Linkit:https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132

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