Improvements of the Design Process in the Microwave Transistors Industry
This paper presents a technique to improve the design process of microwave transistors based on two aspects: an improved design of experiment test (DOE), and an electro-thermal enhanced model (MET). The DOE test allowed us to center the design through variations in specific parameters, avoiding comp...
Príomhchruthaitheoir: | Rafael-Valdivia, Guillermo |
---|---|
Formáid: | Online |
Teanga: | spa |
Foilsithe / Cruthaithe: |
Universidad Pedagógica y Tecnológica de Colombia
2019
|
Ábhair: | |
Rochtain ar líne: | https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9784 |
Míreanna comhchosúla
- Míreanna comhchosúla
-
Compact model with physical parameter prediction capability for RF amplifiers
de réir: Rafael-Valdivia, Guillermo
Foilsithe / Cruthaithe: (2019) -
Design and implementation of a power amplifier rf at 1.748GHz- Area of engineering
de réir: Moreno-Rubio, Jorge Julián, et al.
Foilsithe / Cruthaithe: (2007) -
Waveform measurement in mocrowave device characterization: impact on power amplifiers design
de réir: Quaglia, Roberto, et al.
Foilsithe / Cruthaithe: (2016) -
GaN-based Power amplifiers for microwave applications
de réir: Moreno-Rubio, Jorge Julián, et al.
Foilsithe / Cruthaithe: (2017) -
Closed equations for the design of class f amplifiers
de réir: Moreno-Rubio, Jorge Julián, et al.
Foilsithe / Cruthaithe: (2015)